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| LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon 3 COLLECTOR BCW69LT1 BCW70LT1 3 1 BASE 2 EMITTER 1 2 MAXIMUM RATINGS Rating Collector-Emitter Voltage Emitter-Base Voltage Collector Current -- Continuous Symbol V CEO V EBO CASE 318-08, STYLE 6 Value - 45 - 5.0 - 100 Unit Vdc Vdc mAdc SOT-23 (TO-236AB) IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RJA PD 556 300 2.4 RJA TJ , Tstg 417 -55 to +150 Unit mW mW/C C/W mW mW/C C/W C DEVICE MARKING BCW69LT1 = H1; BCW70LT1 = H2, ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = -2.0 mAdc, IB = 0 ) Collector-Emitter Breakdown Voltage (IC = -100 Adc, V EB = 0 ) Emitter-Base Breakdown Voltage (I E= -10 Adc, I C = 0) Collector Cutoff Current (VCE = -20 Vdc, I E = 0 ) (VCE = -20 Vdc, I E = 0 , TA = 100C) 1. FR- 5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V (BR)CEO V (BR)CES V (BR)EBO I CEO -- -- - 100 - 10 nAdc Adc - 45 - 50 - 5.0 -- -- -- Vdc Vdc Vdc M13-1/6 LESHAN RADIO COMPANY, LTD. BCW69LT1 BCW70LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol hFE 120 215 V V CE(sat) Min Max Unit -- ON CHARACTERISTICS DC Current Gain ( IC= -2.0 mAdc, VCE = -5.0 Vdc ) BCW69LT1 BCW70LT1 Collector-Emitter Saturation Voltage ( IC = - 10 mAdc, IB = -0.5 mAdc ) Base-Emitter On Voltage ( IC = - 2.0 mAdc, V CE = - 5.0Vdc ) Output Capacitance ( I E= 0 V CB = -10Vdc, f = 1.0 MHz) Noise Figure (V CE = - 5.0 Vdc, I C = - 0.2 mAdc, R S = 2.0 k, f = 1.0 kHz, BW = 200 Hz) 260 500 - 0.3 - 0.75 Vdc Vdc -- - 0.6 BE(on) SMALL-SIGNAL CHARACTERISTICS C obo NF -- -- 7.0 10 pF dB M13-2/6 LESHAN RADIO COMPANY, LTD. BCW69LT1 BCW70LT1 TYPICAL NOISE CHARACTERISTICS (V CE = - 5.0 Vdc, T A = 25C) 10 BANDWIDTH = 1.0 Hz R ~0 ~ S 10.0 7.0 5.0 3.0 BANDWIDTH = 1.0 Hz R~ ~ S 7.0 e n , NOISE VOLTAGE (nV) IC=10 A I n , NOISE CURRENT (pA) 5.0 IC=1.0mA 300A 2.0 30A 3.0 100A 1.0mA 300A 1.0 0.7 0.5 0.3 0.2 100A 30A 10A 2.0 1.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 0.1 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k f, FREQUENCY (Hz) f, FREQUENCY (Hz) Figure 1. Noise Voltage Figure 2. Noise Current NOISE FIGURE CONTOURS (V CE = - 5.0 Vdc, T A = 25C) 1.0M 500k BANDWIDTH = 1.0 Hz 1.0M 500k BANDWIDTH = 1.0 Hz 200k 100k 50k 20k 10k 5.0k 2.0k 1.0k 500 R S , SOURCE RESISTANCE ( ) R S , SOURCE RESISTANCE ( ) 200k 100k 50k 20k 10k 5.0k 2.0k 1.0k 500 200 100 10 20 30 50 70 100 200 300 500 700 1.0K 0.5 dB 1.0 dB 2.0dB 3.0 dB 5.0 dB 20 30 50 70 100 200 300 500 700 1.0K 0.5 dB 1.0dB 2.0 dB 3.0 dB 5.0 dB 200 100 10 I C , COLLECTOR CURRENT (A) I C , COLLECTOR CURRENT (A) Figure 3. Narrow Band, 100 Hz 1.0M Figure 4. Narrow Band, 1.0 kHz R S , SOURCE RESISTANCE ( ) 500k 200k 100k 50k 20k 10k 5.0k 2.0k 1.0k 500 200 100 10 20 30 50 70 100 200 10 Hz to 15.7KHz Noise Figure is Defined as: NF = 20 log 10 ( ---------------) 4KTR S e n 2 + 4KTRS + I n2 R S2 1/ 2 0.5dB 1.0dB 2.0dB 3.0 dB 5.0 dB 300 500 700 1.0K e n = Noise Voltage of the Transistor referred to the input. (Figure 3) I n = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman's Constant (1.38 x 10 -23 j/K) T = Temperature of the Source Resistance (K) R s = Source Resistance ( ) I C , COLLECTOR CURRENT (A) Figure 5. Wideband 8 M13-3/6 LESHAN RADIO COMPANY, LTD. BCW69LT1 BCW70LT1 TYPICAL STATIC CHARACTERISTICS V CE , COLLECTOR- EMITTER VOLTAGE (VOLTS) 1.0 I C , COLLECTOR CURRENT (mA) 100 T J = 25C 0.8 80 T A = 25C PULSE WIDTH =300 s DUTY CYCLE<2.0% 300A I B= 400 mA 350A 250 A 200 A 150 A 0.6 I C= 1.0 mA 10 mA 50 mA 100 mA 60 0.4 40 100 A 50A 0.2 20 0 0.002 0.0050.010.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0 0 5.0 10 15 20 25 30 35 40 I B , BASE CURRENT (mA) V , TEMPERATURE COEFFICIENTS (mV/C) V CE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. Collector Saturation Region 1.4 Figure 7. Collector Characteristics 1.6 T J=25C 1.2 *APPLIES for I C / I B< h FE / 2 0.8 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 VC for V CE(sat) 0 25C to 125C -55C to 25C V BE(sat) @ I C /I B = 10 V BE(on)@ V CE= 1.0 V -0.8 25C to 125C VB for V BE -55C to 25C 0.4 0.2 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 -1.6 V CE(sat) @ I C /I B = 10 -2.4 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 10. "On" Voltages Figure 11. Temperature Coefficients M13-4/6 LESHAN RADIO COMPANY, LTD. BCW69LT1 BCW70LT1 TYPICAL DYNAMIC CHARACTERISTICS 500 300 200 1000 V CC= 3.0 V IC /I B= 10 T J= 25C t, TIME (ns) 700 500 300 200 100 70 50 30 20 10 ts VCC= -3.0 V IC /I B= 10 IB1=IB2 T J= 25C t, TIME (ns) 100 70 50 30 20 10 7.0 5.0 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 tr td @ V BE(off)= 0.5 V tf -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 I C , COLLECTOR CURRENT (mA) f T, CURRENT- GAIN -- BANDWIDTH PRODUCT (MHz) I C , COLLECTOR CURRENT (mA) Figure 10. Turn-On Time 500 10.0 Figure 11. Turn-Off Time T J = 25C 300 T J= 25C V CE=20 V C, CAPACITANCE (pF) 7.0 C ib 5.0 5.0 V 200 3.0 100 2.0 C ob 70 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 1.0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 I C , COLLECTOR CURRENT (mA) V R , REVERSE VOLTAGE (VOLTS) Figure 12. Current-Gain -- Bandwidth Product r( t) TRANSIENT THERMAL RESISTANCE(NORMALIZED) 1.0 0.7 0.5 0.3 0.2 Figure 13. Capacitance D = 0.5 0.2 0.1 FIGURE 16 0.05 0.02 P(pk) t SINGLE PULSE 1 0.1 0.07 0.05 0.03 DUTY CYCLE, D = t 1 / t 2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 (SEE AN-569) Z JA(t) = r(t) * RJA 0.01 0.02 0.01 0.01 t 2 T J(pk) - T A = P (pk) Z JA(t) 1.0k 2.0k 5.0k 10k 20k 50k 100k 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 t, TIME (ms) Figure 14. Thermal Response M13-5/6 LESHAN RADIO COMPANY, LTD. BCW69LT1 BCW70LT1 104 I C , COLLECTOR CURRENT (nA) V CC = 30 V 103 DESIGN NOTE: USE OF THERMAL RESPONSE DATA A train of periodical power pulses can be represented by the model as shown in Figure 16. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 14 was calculated for various duty cycles. To find Z JA(t) , multiply the value obtained from Figure 14 by the steady state value R JA . Example: Dissipating 2.0 watts peak under the following conditions: t 1 = 1.0 ms, t 2 = 5.0 ms. (D = 0.2) Using Figure 14 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore T = r(t) x P (pk) x R JA = 0.22 x 2.0 x 200 = 88C. For more information, see AN-569. I CEO 102 101 I CBO 100 AND I CEX @ V BE(off) = 3.0 V 10-1 10-2 -4 -2 0 +20 +40 +60 +80 +100 +120 +140 +160 T J , JUNCTION TEMPERATURE (C) Figure 15. Typical Collector Leakage Current M13-6/6 |
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